? 2005 ixys all rights reserved g = gate d = drain s = source tab = drain ds99251b(02/05) polarhv tm power mosfet v dss = 600 v i d25 =30 a r ds(on) 240 m ? ? ? ? ? advanced technical information n-channel enhancement mode fast recovery diode avalanche rated features z fast recovery diode z unclamped inductive switching (uis) rated z international standard packages z low package inductance - easy to drive and to protect to-3p (ixtq) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c30a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 seconds 300 c plastic body for 10 seconds 260 c m d mounting torque (to-3p) 1. 13/10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g plus220 4.0 g to-268 5.0 g ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p ixtv 30n60ps to-268 (ixtt) g s d (tab) plus220 (ixfv) to-247 (ixfh) g d s d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 30 v, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 240 m ? pulse test, t 300 s, duty cycle d 2 % g d s d (tab) plus220 (ixfv...s) g s d d (tab) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 55 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6.5v 6v 5.5v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 012345678 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6.5v 6v ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 22 25 s c iss 5050 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 540 pf c rss 53 pf t d(on) 29 ns t r v gs = 10 v, v ds = 0.5 i d25 20 ns t d(off) r g = 4 ? (external) 80 ns t f 25 ns q g(on) 82 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 nc q gd 30 nc r thjc 0.19 k/w r thck 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 410 ns q rm v r = 100v 4.0 c
? 2005 ixys all rights reserved ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 024681012141618 v d s - volts i d - amperes v gs = 10v 7v 5.5v 5v 4.5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 30a i d = 15a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v fig. 7. input admittance 0 5 10 15 20 25 30 35 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40 c 25 c 125 c
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v g s - volts v ds = 250v i d = 15a i g = 10ma fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds(on) limit 10ms 25 s
? 2005 ixys all rights reserved ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p package outline drawings d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1 - gate 2 - drain 3 - source tab - drain e1 e l2 d l3 l l 1 3x b 2x e c a 2 a1 a e1 d1 plus220 (ixtv) outline to-247ad (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-3p (ixtq) outline to-268 (ixtt) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n60p ixtq 30n60p ixtt 30n60p ixtv 30n60p package outline drawings l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1-gate 2-drain e e1 d l2 a a1 l 1 l l3 e 2x b c a 2 l 4 a 3 e1 plus220smd (ixtv..s) outline
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